View Article |
An optimized low‐noise low‐power preamplifier for Cardiac Implants
Mairaj, Sanna1, Ahmed, Suhaib2, Kakkar, Vipan3.
Among various analog circuits, the preamplifier has a prominent role in the analog front
end (AFE) circuit of biomedical implantable microsystems for a reliable acquiring of weak
biophysiological signals. The AFE acts as an interface between the acquired analog
biosignals and the digital part in these implants. As the industry of the biomedical
implantable devices develops, lowering the power consumption as much as possible
without sacrificing the performance is essential in improving the service time of the
battery, which cannot be replaced frequently. Hence, there is an increasing demand for a
low noise, low power bio‐acquisition system so as to avoid bulky connectivity and reduce
patient mobility and discomfort. This paper thus presents an operational transconductance
based preamplifier for the application in cardiac implants. The performance of the
proposed design was evaluated based on various parameters such as gain, common mode
rejection ratio (CMRR), noise spectral density, and power consumption. Besides,
optimization by supply voltage scaling of the proposed design was done with the focus is on
lowering the power consumption. The trade‐offs between various parameters like gain,
speed, and power consumption were observed in the optimized design. The preamplifier,
designed using a 180nm CMOS technology, provides a high gain of 50dB at a supply voltage
of 1.5V and a low power dissipation of 61.10µW. Based on the performance evaluation, it
was observed that the proposed preamplifier is suitable for low power cardiac
applications.
Affiliation:
- Shri Mata Vaishno Devi University, India
- Shri Mata Vaishno Devi University, India
- Shri Mata Vaishno Devi University, India
Download this article (This article has been downloaded 109 time(s))
|
|
Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
|
2 |
Immediacy Index
|
0.000 |
Rank |
0 |
Indexed by |
Scopus 2020 |
Impact Factor
|
CiteScore (1.3) |
Rank |
Q3 (Electrical and Electronic Engineering)) Q4 (Electronic, Optical and Magnetic Materials) |
Additional Information |
SJR (0.298) |
|
|
|