The main objective of this paper is to investigate the DC and AC performances of GaN/InGaN/GaN Double Gate High Electron Mobility Transistor (DG-HEMT) based on innovative materials III-V in particular III-N materials (Nitride Materials) by using SILVACO TCAD device simulator. First, the structure was modelled with optimized physical and geometrical parameters. Secondly, the DC and AC performances were investigated. Findings indicate that the device offers a maximum drain current of 1.6 A/mm, a threshold voltage of -2.2 V, a maximum transconductance of 0.8 S mm-1, a Ion/Ioff ration of 1010, a Drain Induced Barrier Lowering (DIBL) of 37 mV/V, a Sub-threshold Swing (SS) of 75 mV/dec and a Gate-leakage of 1.10-12 A. In terms of AC performances, the device exhibits a cut-off frequency (Ft) of 990 GHz and a maximum oscillation frequency (Fmax) of 2 THz. Finally, a comparison study was carried out with a recent state of the art.