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Modeling of tunneling current of electron in bilayer armchair graphene nanoribbons p-n junction diode using transfer matrix method
Intan Anjaningsih1, M. Fulki Fadhillah2, Lilik Hasanah3, Endi Suhendi4.
The tunneling current in the P-N junction diode Bilayer Armchair Graphene Nanoribbons
(BAGNR) was calculated. The tunneling current was obtained by solving the Schrödinger
equation to find out the electron transmittance through a potential barrier by using the
Transfer Matrix Method (TMM). The tunneling current was calculated for various variables
such as bias voltage, BAGNR width, electric field, and temperature. It is found that the
tunneling current increases with the increasing bias voltage. Furthermore, the tunneling
current of electron increases with the increasing BAGNR width or the applied electric field,
otherwise it decreases with the increasing temperature. The tunneling current of P-N
junction diode BAGNR generated approximately 4.8 μA with 1 MV/cm electric field and a
bias voltage of 100 mV. Then, the calculation of tunneling current of BAGNR was also
compared with Monolayer Armchair Graphene Nanoribbons (MAGNR). By using BAGNR,
the tunneling current produced is three times greater than using MAGNR. In addition, the
tunneling current using TMM is then compared with the Wantzel-Kramers-Brillouin
(WKB) method and shows that these two methods produce the same value at a low voltage
below 30 mV, while at high voltages, MMT always has a higher value.
Affiliation:
- Universitas Pendidikan Indonesia, Indonesia
- Universitas Pendidikan Indonesia, Indonesia
- Universitas Pendidikan Indonesia, Indonesia
- Universitas Pendidikan Indonesia, Indonesia
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Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
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2 |
Immediacy Index
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0.000 |
Rank |
0 |
Indexed by |
Scopus 2020 |
Impact Factor
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CiteScore (1.3) |
Rank |
Q3 (Electrical and Electronic Engineering)) Q4 (Electronic, Optical and Magnetic Materials) |
Additional Information |
SJR (0.298) |
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