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Performance of multi-function devices fabricated from la2o3-doped nio thin films
Asmiet Ramizy1, Abubaker S. Mohammed2, Isam M. Ibrahim3, Eisa, M. H4.
Multi-function devices fabricated from lanthanum oxide (La2O3)-doped NiO thin films at 0,
2, 4, and 6% wt on porous silicon (PS) substrates were prepared by Pulsed Laser Deposition
(PLD) method. PS was fabricated using n-type Si with (111) orientation by the
photoelectrochemical etching process (ECE) at a constant etching time of 20 minutes and
current density of 15 mA/cm2. X-ray Diffraction (XRD) and AFM results showed uniform
morphology and good crystal quality of the synthesized nanostructures. The energy gap
(Eg) of NiO is 3.25 eV, and it increased as the doping ratio was increased. Gas sensing and
UV-detection were studied respectively. The maximum sensitivity to H2S gas was observed
in the film doped with 6% La2O3 at 100ºC and found to be 3500%. The photosensitivity was
66% for NiO/PS and 118% with La2O3 doping ratio of 6%. The novelty of this work is to use
a very simple and low-cost method Pulsed Laser Deposition (PLD) to growth La2O3 doped
NiO as compared with other technique which used to fabricate nanostructure that is either
very expensive or very time-consuming.
Affiliation:
- University of Anbar, Iraq
- University of Baghdad, Iraq
- Sudan University of Science and Technology, Sudan
- Ministry of Education, Direction of Education in AL-Anbar ., Iraq
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Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
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2 |
Immediacy Index
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0.000 |
Rank |
0 |
Indexed by |
Scopus 2020 |
Impact Factor
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CiteScore (1.3) |
Rank |
Q3 (Electrical and Electronic Engineering)) Q4 (Electronic, Optical and Magnetic Materials) |
Additional Information |
SJR (0.298) |
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