View Article |
Structural, optical and i-v characteristics of ito/p-si hetero-junction deposited by chemical spray pyrolysis
Salam Amir Yousif1, Duha Ismail Khalil2.
Indium Tin Oxide (ITO) thin films at different tin doping of 0, 5, 10, 15, and 20 wt% were
successfully prepared using Chemical Spray Pyrolysis (CSP) method. The peaks of X-ray
Diffraction (XRD) indicate that all samples have polycrystalline cubic structure and the
plane (222) is the preferential orientation. AFM examinations show that the root means
square roughness of ITO thin films decreased with increasing tin doping and the grain size
transformed from microstructure to nanostructure when tin-doped with indium oxide. The
maximum transmittance value measured is approximately 80% for the infrared region,
and the bandgap is equal to 3.5, 3.7, 3.67, 3.65, and 3.58 eV corresponding to the
concentration 0, 5, 10, 15, and 20%. The current-Voltage (I-V) characteristics of ITO/p-Si
hetero-junction for dark and illuminated conditions have been investigated.
Affiliation:
- Mustansiriyah University, Baghdad, Iraq
- Mustansiriyah University, Baghdad, Iraq
Download this article (This article has been downloaded 122 time(s))
|
|
Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
|
2 |
Immediacy Index
|
0.000 |
Rank |
0 |
Indexed by |
Scopus 2020 |
Impact Factor
|
CiteScore (1.3) |
Rank |
Q3 (Electrical and Electronic Engineering)) Q4 (Electronic, Optical and Magnetic Materials) |
Additional Information |
SJR (0.298) |
|
|
|