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Designs and simulations of millimetre wave on-chip single turn inductors for 0.13 µm rf cmos process technology
Hao, Wuang Leong1, Kim, Ho Yeap2, Yee, Chyan Tan3.
The upcoming Fifth Generation (5G) network has promoted researches in integrated
circuit designs and microelectromechanical systems (MEMS). Since the 5G technologies
operate mainly in the millimetre wave (mm-wave) band, developing electronic components
which are compatible with this frequency range is therefore necessary. This paper presents
the design of four novel inductors, applied particularly in Low Noise Amplifiers (LNAs)
which operate at 60 GHz to overcome the limitations of the particular Process Design Kit
(PDK) in which the provided scalable inductors are characterised at a maximum frequency
of 30 GHz. The design is based on Silterra’s 0.13 µm radio frequency complementary metaloxide-semiconductor (RF CMOS) process technology. The inductors use Ultra-Thick Metal
(UTM) with a copper thickness of 3.3 µm. A mixture of analytical and parametric analyses
is utilised in designing the four spiral inductors which can be implemented in the PDK used
by the aforementioned LNA. The inductances and Q-factors across 1 GHz to 150 GHz were
plotted and analysed. The results show that the four designs exhibit very good performance
at 60 GHz with minimal tolerances. This paper serves as a proof-of-concept for a
methodology on custom inductor design and simulations with existing PDK limitations.
Affiliation:
- Universiti Tunku Abdul Rahman, Malaysia
- Universiti Tunku Abdul Rahman, Malaysia
- Universiti Tunku Abdul Rahman, Malaysia
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Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
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2 |
Immediacy Index
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0.000 |
Rank |
0 |
Indexed by |
Scopus 2020 |
Impact Factor
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CiteScore (1.3) |
Rank |
Q3 (Electrical and Electronic Engineering)) Q4 (Electronic, Optical and Magnetic Materials) |
Additional Information |
SJR (0.298) |
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