The main purpose of this paper is to inquireaboutthe DC and AC performances of AlGaN/GaN high electron mobility transistors structure based on innovational II-N materials with 4H-SiCsubstrateand 30 nm gate length. First, the structure was designed withoptimized physical and geometric parameters. Second, DC and AC performance have been studied.The device exhibits a maximum drain current of 600 mA/mm, a threshold voltage of -3.5 V, a maximum transconductance of 200 mS /mm, an Ion/Ioff ratio of 109, DIBL of 22 mV/V, and SS of 200 mV/dec. Furthermore, remarkable ACperformance in terms of cut-off frequency (Ft) and maximum oscillation frequency (Fmax) has been attained. This outstanding DC and AC performances make them a splendid candidate for future high power and high frequency application.