Radio-frequency (RF) Magnetron Sputtering was used to deposit thin tungsten di sulfide (WS2) films on top of soda lime glass substrates. Deposition temperature of RF magnetron sputtering was varied from room temperature (RT) to 200oC with 50oC interval to investigate the impact on film characteristics as well as to optimize for suitable application in thin film solar cells. Structural and opto-electronic properties of as-grown films were investigated and analyzed for different growth temperatures. All the WS2 films exhibit granular structure consist of rhombohedral phase with a strong preferential orientation towards (101) crystal plane. Optical bandgaps are ranged from 1.73 eV to 2.3 eV for different growth temperatures. As-grown films show higher carrier concentration with n-type conductivity. Polycrystalline ultra-thin WS2 film with bandgap of 2.4 eV, carrier concentration of 2.28 X 1017 cm-3 and resistivity of 1.52 Ω-cm were successfully achieved at 50oC with 50 W RF power that can be employed as window layers in thin film solar cells.