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Fabrication and characterization of Cu2O:Ag/Si solar cell via thermal evaporation technique
Alaa Nihad Tuama1, Mohd Arif Agam2, Khalid Haneen Abass3.
Cuprous oxide, a p-type semiconductor, permitsmultiple device applications due tothe non-toxic nature, suitable direct energy gap, earth abundance, and idealband alignment neededfor solar cell and photoelectrochemical applications.Due to that, there has been a renewal of interest in solar cells fabrication field based on Cu2O material.Inthis work, pure cuprous oxide and silver nanoparticles doped cuprous oxide (0.02, 0.04, 0.06wt.%) films were prepared viathermal evaporation techniquewith a thickness of 60 nm. The structural, morphological, optical, and electrical properties of the films have been studied by characterization instruments suchasX-rayDiffraction (XRD), Field Emission Scanning Electron Microscope (FESEM), Atomic Force Microscope (AFM), UV-Visible spectrophotometer, and I-V characteristic. The XRDrevealedthat the fabricatedfilms havea certain amorphousquality and the grain size was found to be in between (9.2-18.4) nmwhich comparable to that measured from FESEM. The optical bandgap of the samples was found to be in between 2.79eV and 3.42eVwhich was the main factor in manipulating and improving the Cu2O optical properties by doping and choosing the appropriate onesto fabricate high efficiency and low-cost solar cells. The effect of the Ag doping on the Cu2O properties was obvious and positively influenced by solar cell efficiency improvement.Optimization of the deposition conditions and doping process led to enhanced solar cell performance, especially theconversionefficiency achieved (3.5)by doping 0.04%Ag to Cu2Owhich is considered to be highly efficient compared to the overall efficiency of Cu2O solar cells. This can open a new route for the fabrication of Cu2O based solar cells with improved performance
Affiliation:
- University Tun Hussein Onn Malaysia,, Malaysia
- University Tun Hussein Onn Malaysia,, Malaysia
- University of Babylon, Iraq
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Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
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2 |
Immediacy Index
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0.000 |
Rank |
0 |
Indexed by |
Scopus 2020 |
Impact Factor
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CiteScore (1.3) |
Rank |
Q3 (Electrical and Electronic Engineering)) Q4 (Electronic, Optical and Magnetic Materials) |
Additional Information |
SJR (0.298) |
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