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Structural, microstructure, dielectric and magnetic behavior of Ga substituted biFeO3
N. Z. S Noreainia1, A. M. M Ali2, M. K Yaakob3, M. F. M Taib4, O. H Hassan5, A. M. M Ali6, O. H Hassan7, M. Z. A Yahya8.
Galium doped at Bi-site of Bi1-xGaxFeO3 (BGFO) ceramics with x = 0.00, 0.01, 0.02 and 0.03
was synthesized by the solid state reaction route. The effect of gallium on structural,
microstructure, dielectric and magnetic properties have been investigated. Phases of BGFO
were investigated via X-ray Diffractometer has confirmed the formation of a single phase of
BGFO where x ≤ 0.02 is the solid solution limit of gallium. The grain size of BGFO is reduced
with the increasing of the Ga concentration. Meanwhile dielectric measurements were
performed by using Electrical Impedance Spectroscopy (EIS) at room temperature indicates
the inversely proportional pattern for both dielectric constant and dissipation factor in
frequency range up to 1MHz. Moreover, substitution in BFO showed a significant
improvement in dielectric loss with increasing of Ga content. The magnetic measurement
revealed an increase in Ga-content up to 0.02 at room temperature in BGFO can significantly
induce the spontaneous magnetization and weak ferromagnetic behavior due to the collapse
of spin cycloid structure and modification of antiparallel spin.
Affiliation:
- Universiti Teknologi MARA, Malaysia
- Universiti Teknologi MARA, Malaysia
- Universiti Teknologi MARA, Malaysia
- Universiti Teknologi MARA, Malaysia
- Universiti Teknologi MARA, Malaysia
- Universiti Teknologi MARA, Malaysia
- Universiti Teknologi MARA, Malaysia
- Universiti Pertahanan Nasional Malaysia, Malaysia
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Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
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2 |
Immediacy Index
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0.000 |
Rank |
0 |
Indexed by |
Scopus 2020 |
Impact Factor
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CiteScore (1.3) |
Rank |
Q3 (Electrical and Electronic Engineering)) Q4 (Electronic, Optical and Magnetic Materials) |
Additional Information |
SJR (0.298) |
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