Tunnel FET is one of the alternative devices for low power electronics, having steep subthreshold swing and lower leakage current than conventional MOSFET. In this research, we have implemented the idea of high -k gate dielectric on double gate Tunnel FET, DG-TFET for improvement of device features. An extensive investigation for the analog/RF and linearity feature of DG-TFET has been done here for low power circuit and system development. Several essential analog/RF and linearity parameters like transconductance(gm), transconductance generation factor (gm/IDS), its high-order derivatives (gm2, gm3), cut-off frequency (fT), gain band width product (GBW) and transconductance generation factor (gm/IDS) have been investigated for low power RF applications. The VIP2, VIP3, IMD3, IIP3, distortion characteristics (HD2, HD3), 1- dB the compression point, delay and power delay product performance have also been thoroughly studied. It has been observed that the device features discussed for circuitry applications are found to be sensitive to of gate materials, design configuration and input signals.