In this paper, the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material are presented. The resist used to demonstrate this EBL pattern creation is ma-N 2403 which is a negative tone photoresist series, while positive resist PR1-2000A is used to transform photomask design using optical lithography. Three different patterns structures are fabricated on each sample namely alignment mark, silicon nanowire and metal pad. The JEOL scanning electron microscopy (SEM) has been modified to integrate with RAITH software to be used for electron beam lithography. Nano-scaled nanowires were first patterned by EBL and formed by ICP etching followed by micro-sized contact pads were defined by photolithography process. The approach describe in this paper is a mix-and-match techniques using both conventional photolithography and advanced nanolithography, making use of an alignment strategy.