A polycrystalline lead sulfide PbxS1-x alloys with various Pb content (x=0.50, 0.51, 0.52, 0.54, and 0.55) has been prepared successfully. PbxS1-x films of thickness 1.5μm have been deposited onto glass and n-Si substrates by flash thermal evaporation method at room temperature (R.T) under vacuum 10-6 torr and deposition rate 0.83x10-3μm/sec. These films have been annealed at different temperatures (Ta=R.T, 323, 373, 423, 473, and 523) K. The electrical properties of these films were studied by variation of Pb content and annealing temperature. The d.c conductivity increases with increasing Pb content for all PbxS1-x films and decreases with increasing Ta. The electrical activation energy increases at range of temperatures and decreases in other range of temperatures with increasing annealing temperature and Pb content. From the Hall Effect measurement, the films of (x=0.50, 0.51, and 0.52) are found p-type and the films of compositions (x=0.54 and 0.55) are n-type and change to p-type at 523K. The carriers concentration decreases with increasing annealing temperatures and Pb content for p-type, while it increases with increasing annealing temperatures and decreases with increasing the Pb content for n-type samples. The Hall mobility increases sharply with increasing Ta and Pb content for p-type films, while it increases with increasing Pb content and decreases with increasing Ta for n-type films. The drift velocity (vd), carrier life time (τ), and mean free path (l) increase with increasing annealing temperatures for p-type and decreases for n-type, while it increases with increasing Pb content for both p-type and n-type films. From measurements of the four points probe method, it is found that the silicon is of n-type, whereas PbxS1-x are p- type for (x=0.50, 0.51 and 0.52) and n-type for (x=0.54 and 0.55).