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International Journal of Nanoelectronics and Materials


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Simulation model of multi-junction InxGa1-xN solar cells

Aziz, W.J1, Ibrahim, K2.
International Journal of Nanoelectronics and Materials (Volume 3, No. 1, 2010, Pages 43 to 52)
Times cited: 0
In this model we investigate theoretically the characteristics of multi junction InxGa1-xN series-connected solar cells under air mass 1.5 global irradiance spectrum using Matlab program. The doping levels of p-type and n-type were 5×1018cm−3 and 1×1018cm−3 respectively. The efficiency is found to be varied from 18.01% for single junction to 42.55% for five junctions. The enhancement in VOC was observed from the lower values of total thickness.
Affiliation:
  1. Universiti Sains Malaysia, Malaysia
  2. Universiti Sains Malaysia, Malaysia
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  Journal Coverage
Volume 18, No. 1, 2025
Volume 17, No. 4, Okt 2024
Volume 17, No. 3, July 2024
Volume 17, No. 2, April 2024
Volume 17, No. 1, Jan 2024

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Indexed by MyJurnal (2021)
H-Index 2
Immediacy Index 0.000
Rank 0
Indexed by Scopus 2020
Impact Factor CiteScore (1.3)
Rank Q3 (Electrical and Electronic Engineering))
Q4 (Electronic, Optical and Magnetic Materials)
Additional Information SJR (0.298)

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