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International Journal of Nanoelectronics and Materials


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Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices

Alwan, Alwan M1, Abdulzahra, Narges Z2, Ahmed, N.M3, Halim, N.H.A4.
International Journal of Nanoelectronics and Materials (Volume 2, No. 2, 2009, Pages 157 to 161)
Times cited: 1
The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. Eyes, can see a blue emission from PSi after thermal oxidation, we can obvious increasing energy gab, that due to decrease silicon column (nano particles).Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO).
Affiliation:
  1. University of Technology Baghdad, Iraq
  2. University of Technology Baghdad, Iraq
  3. Universiti Malaysia Perlis, Malaysia
  4. Universiti Malaysia Perlis, Malaysia
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Volume 18, No. 1, 2025
Volume 17, No. 4, Okt 2024
Volume 17, No. 3, July 2024
Volume 17, No. 2, April 2024
Volume 17, No. 1, Jan 2024

  Indexation
Indexed by MyJurnal (2021)
H-Index 2
Immediacy Index 0.000
Rank 0
Indexed by Scopus 2020
Impact Factor CiteScore (1.3)
Rank Q3 (Electrical and Electronic Engineering))
Q4 (Electronic, Optical and Magnetic Materials)
Additional Information SJR (0.298)

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