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International Journal of Nanoelectronics and Materials


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Studying the Effect of X-ray Radiation on the Electrical Properties of Diodes 1N1405

Najim, Jassim M1.
International Journal of Nanoelectronics and Materials (Volume 1, No. 1, 2008, Pages 35 to 39)
Times cited: 0
The diode 1N1405 type silicon is subjected to different levels of energy and time irradiation. We have about three times; at every time we have measured the forward and reverse bias voltage of the diode to know what is the difference between the electrical properties of the same diode without irradiation of x-ray.
Affiliation:
  1. Sana’a University, Yemen
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  Journal Coverage
Volume 15, No.101, Special Issue March 2022
Volume 15, No. 4, Oct 2022
Volume 15, No. 3, July 2022
Volume 15, No. 2, April 2022
Volume 15, No. 1, January 2022

  Indexation
Indexed by MyJurnal (2021)
H-Index 2
Immediacy Index 0.000
Rank 0
Indexed by Scopus 2020
Impact Factor CiteScore (1.3)
Rank Q3 (Electrical and Electronic Engineering))
Q4 (Electronic, Optical and Magnetic Materials)
Additional Information SJR (0.298)

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