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Wet Chemical Synthesis of Anode Reforming Layer in Solid Oxide Fuel Cell: A Comprehensive Review of Sol-Gel, Co-Precipitation and Combustion Synthesis
Saidatul Haneen Badruhisham1, Anis Muneerah Shaiful Bahari2, Saidatul Akmal Biyamin3, Nor Anisa Arifin4, Ng Guat Peng5.
Anode reforming layer is one of the common strategies to reduce the impact of natural gases as fuel for solid oxide fuel cells (SOFC). This anode reforming layer helps to convert natural gas, for example, methane to hydrogen during the operation of SOFC. Thus,it reduces the formation of carbon deposition and increases the SOFC performance. However, the performance of the anode reforming layer depends on its microstructure characteristic, which may vary based on the synthesis method. Synthesis methods, such as powder, infiltration, coating, and combination routes, are studied to produce an optimum catalyst material. Powder routes, which consist of dry and wet methods, are gaining popularity due to their performance, simple and low-cost method. However, the wet chemical method is favoured for its cost-effectiveness, simplicity, and ability to produce high-quality powder. Thus, this review discussed the wet chemical methods, specifically the sol-gel, co-precipitation and combustion synthesis methods. In addition, thecommon parameters, previous findings and modifications of these methods were also briefly discussed. This review aims to discuss the various anode reforming layer synthesis methods, a general comparison of the methods and their influence on the propertiesand performance of SOFCs.
Affiliation:
- Tenaga Nasional Berhad Research Sendirian Berhad, Malaysia
- Tenaga Nasional Berhad Research Sendirian Berhad, Malaysia
- Tenaga Nasional Berhad Research Sendirian Berhad, Malaysia
- Tenaga Nasional Berhad Research Sendirian Berhad, Malaysia
- Tenaga Nasional Berhad Research Sendirian Berhad, Malaysia
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Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
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2 |
Immediacy Index
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0.000 |
Rank |
0 |
Indexed by |
Scopus 2020 |
Impact Factor
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CiteScore (1.3) |
Rank |
Q3 (Electrical and Electronic Engineering)) Q4 (Electronic, Optical and Magnetic Materials) |
Additional Information |
SJR (0.298) |
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