Structural, direct current (DC) electrical and optical properties of themially evaporated N-(p-dimethylaminobenzylidene)-p-nitroaniline (DBN) thin films have been studied. The crystal structure of DBN in both powder and thin film forms is determined by the X-ray diffraction technique. The results showed that the material is polycrystalline in both powder and as-deposited thin films. The DBN in powder form has a triclinic crystal structure with a space group of Pl. The crystallite size of the films is calculated as a function of both film thickness (250-1100 nm) and annealing temperatures (353,373 and 393 K). The resistivity of DBN thin films is measured as a function of film thickness. The temperature dependence of DC electrical conductivity for DBN films is calculated with different film thickness. The temperature dependence of DBN thin films showed a typical semiconductor behavior. The films have two activation energy of conduction in the temperature range of (303-393 K). The two activation energies decease with increasing film thickness. The absorption coefficient and the optical band gap are estimated for DBN films.