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Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition (PECVD) via VLS mechanism
Yussof Wahab1, Hamidinezhad, Habib2, Zulkafli Othaman3.
Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nanowires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer.
Affiliation:
- Universiti Teknologi Malaysia, Malaysia
- Universiti Teknologi Malaysia, Malaysia
- Universiti Teknologi Malaysia, Malaysia
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MyJurnal (2021) |
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6 |
Immediacy Index
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0.000 |
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0 |
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Web of Science (SCIE - Science Citation Index Expanded) |
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JCR (1.009) |
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Q4 (Multidisciplinary Sciences) |
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JCI (0.15) |
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Scopus 2020 |
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CiteScore (1.4) |
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Q2 (Multidisciplinary) |
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SJR (0.251) |
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