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Current and conductance modulation at elevated temperature in siliconand InAs-based spin field-effect transistors
Osintsev, Dmitri1, Sverdlov, Viktor2, Makarov, Alexander3, Selberherr, Siegfried4.
Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dependent strength of the spin-orbit interaction in the semiconductor region. We investigated the properties of SpinFETs for various parameters - the band mismatch, the barrier height between the contacts and the channel and the strength of the spin-orbit coupling, for various temperatures. We demonstrated that the creation of Schottky barriers between the channel and the contacts guarantees a pronounced modulation of the magnetoresistance sufficient to open a possibility to operate SpinFETs at room temperature. We also demonstrated that silicon fins with [100] orientation exhibit a stronger dependence on the value of the spin-orbit interaction and are thus preferable for practical realization of silicon-based SpinFETs.
Affiliation:
- Institute for Microelectronics, Austria
- Institute for Microelectronics, Austria
- Institute for Microelectronics, Austria
- Institute for Microelectronics, Austria
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Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
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6 |
Immediacy Index
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0.000 |
Rank |
0 |
Indexed by |
Web of Science (SCIE - Science Citation Index Expanded) |
Impact Factor
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JCR (1.009) |
Rank |
Q4 (Multidisciplinary Sciences) |
Additional Information |
JCI (0.15) |
Indexed by |
Scopus 2020 |
Impact Factor
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CiteScore (1.4) |
Rank |
Q2 (Multidisciplinary) |
Additional Information |
SJR (0.251) |
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