Simulation and analyzing the electrical characteristics of0.24 micron CMOS device was done by using Silvaco TCAD. Electrical characteristics were carried out by using Atlas device simulator; while jar simulation the process was carried out by /Ising Athena process simulator to modifY theoretical values and obtain more accurate process parameters. The electrical parameter was extracted to investigate the device characteristics. Several design analyses were pelformed to investigate the effectiveness of the advanced method in order to prevent the varying ofthreshold voltage. The electrical characteristics produce the graph of drain current versus drain voltage, ID-VDand drain current versus gate voltage, ID-VG. From ID-VG can be obtained the threshold voltage, Vr in which Vrfor NMOS transistor is lower than VTfor PiVIOS transistor )·vhich is 0.6695V and -0.9683 V respectively. The gate length LG obtainedfrom the simulationfor NMOS and PMOS is the same which is 0.235 micron and it is nearest to the scale for this research work.