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Gallium nitride: a nanoscale study using electron microscopy and associated techniques

Benaissa, Mohammed1, Vennéguès, Philippe2.
Sains Malaysiana (Volume 37, No. 3, 2008)
Times cited: 0
A complete nanoscale study on GaN thin films doped with Mg. This study was carried out using TEM and associated techniques such as HREM, CBED, EDX and EELS. It was found that the presence of triangular defects (of few nanometers in size) within GaN:Mg films were at the origin of unexpected electrical and optical behaviors, such as a decrease in the free hole density at high Mg doping. It is shown that these defects are inversion domains limited with inversion-domains boundaries.
Affiliation:
  1. Not Indicated, Not Indicated
  2. Not Indicated, Not Indicated
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Volume 54, No. 3, 2025
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  Indexation
Indexed by MyJurnal (2021)
H-Index 6
Immediacy Index 0.000
Rank 0
Indexed by Web of Science (SCIE - Science Citation Index Expanded)
Impact Factor JCR (1.009)
Rank Q4 (Multidisciplinary Sciences)
Additional Information JCI (0.15)
Indexed by Scopus 2020
Impact Factor CiteScore (1.4)
Rank Q2 (Multidisciplinary)
Additional Information SJR (0.251)

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