View Article |
Switching characteristics of SRO-MISS devices
Majlis, Burhanuddin Yeop1, Morant, M. J2.
The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric presure chemical vapour deposition (APCVD) at 650°C with $SiH{_4}$ and $N{_2}O$ reactant gases and $N{_2}$ carrier. The reactant gas phase ratio, $R{_0}$, varies from 0.09 to 0.25 and the deposition time from 0.6 to 2 minutes.
Affiliation:
- Not Indicated, Not Indicated
- Not Indicated, Not Indicated
Fulltext is not available. Please contact the Editor Manager to get the fulltext
|
|
Indexation |
Indexed by |
MyJurnal (2021) |
H-Index
|
3 |
Immediacy Index
|
0.000 |
Rank |
0 |
|
|
|