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International Journal of Nanoelectronics and Materials
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International Journal of Nanoelectronics and Materials
Volume 6, No. 2, 2013
Arutyunov, N. Yu; Nadir Sekkal; Aourag, H.
On the application of positron spectroscopy to heteronanostructures
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1
Habubi, Nadir F; Mishjil, Khudheir A; Rashid, Hayfa G; Mansour, Hazim L.
Electric field distribution in weakly absorbing monolayer at oblique incidence of light
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2
Rasheed, Bassam G; Rashid, Hayfa G; Dawood, Yasmeen Z; Hassan, Ahmed T.
Evaluation of energy band gap of porous silicon using Newton-Raphson method
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3
Paulthurai, Anbarasu; Dharmaraj, Balamurugan.
Low-power and high-performance 1-bit set full-adder
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4
Ghazai, Alaa J; Abu Hassan, H; Hassan, Z; Hussein, A. Sh.
Effects of thermal annealing on Ti/A1 Ohmic contacts on quaternary n-A10•081n0•08Ga0.84N alloy film
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5
Chowdhury, Subhra; Biswas, Dhrubes.
Effect of device parameters on transmission coefficient of A10•2Ga0•8N/GaN Resonant Tunneling Diode grown on silicon substrate
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6
Journal Coverage
Volume 17, No. 4, Okt 2024
Volume 17, No. 3, July 2024
Volume 17, No. 2, April 2024
Volume 17, No. 1, Jan 2024
Volume 16, No. 101, Special Issue Dec 2023
Volume 16, No. 4, Okt 2023
Volume 16, No. 3, Julai 2023
Volume 16, No. 2, Apr 2023
Volume 16, No. 1, Jan 2023
Volume 15, No.101, Special Issue March 2022
Volume 15, No. 101, Special Issue Dec 2022
Volume 15, No. 4, Oct 2022
Volume 15, No. 3, July 2022
Volume 15, No. 2, April 2022
Volume 15, No. 1, January 2022
Volume 14, December 2021 (Special Issue INCAPE 2021)
Volume 14, August 2021 ( Special Issue ISSTE 2021)
Volume 14, No. 4, October 2021
Volume 14, No. 3, July 2021
Volume 14, No. 2, April 2021
Volume 14, No. 1, January 2021
Volume 13, Special Issue, December 2020
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Volume 13, No. 4, October 2020
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Volume 11, December 2018 (Special Issue BOND21)
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Volume 6, No. 2, 2013
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H-Index
2
Immediacy Index
0.000
Rank
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Impact Factor
CiteScore (1.3)
Rank
Q3 (Electrical and Electronic Engineering))
Q4 (Electronic, Optical and Magnetic Materials)
Additional Information
SJR (0.298)
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